NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：67.68 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：479.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

文件：484.56 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：479.86 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

文件：484.56 Kbytes 页数：8 Pages

SANYO

三洋

RF Transistor 10V, 30mA, fT=8GHz, NPN Dual MCP6

ONSEMI

安森美半导体

Package：6-TSSOP，SC-88，SOT-363；包装：托盘 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 10V 8GHZ 6MCP

ONSEMI

安森美半导体