High Dynamic Range FET

Product Description The FH101 is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb q

文件：177.61 Kbytes 页数：4 Pages

WJCI

High Dynamic Range FET

Product Description The FH101 is a high dynamic range FET packaged in a low-cost surface-mount package. The combination of low noise figure and high output IP3 at the same bias point makes it ideal for receiver and transmitter applications. The device combines dependable performance with superb q

文件：177.61 Kbytes 页数：4 Pages

WJCI

High-Frequency Low-Noise Amp, Differential Amp Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH102 is formed with two chips, being equivalent to the 2SC5226, placed in one package. • Optimal for differential amplification due to excellent thermal

文件：66.91 Kbytes 页数：5 Pages

SANYO

三洋

RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：510.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one p

文件：69.03 Kbytes 页数：6 Pages

SANYO

三洋

RF Transistor

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH102A is formed with two chips, being equivalent to the 2SC5226A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：510.26 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH103 is formed with two chips, being equivalent to the 2SC4867, placed in one pac

文件：49.02 Kbytes 页数：4 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH104 is formed with two chips equivalent to the 2SC4853 placed in one package. • Excellent in thermal equilibrium and pair capability.

文件：49.47 Kbytes 页数：4 Pages

SANYO

三洋

High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly. • The FH105 is formed with two chips, being equivalent to the 2SC5245, placed in one package. • Excellent in thermal equilibrium and pair capability.

文件：63.44 Kbytes 页数：5 Pages

SANYO

三洋

NPN Epitaxial Planar Silicon Composite Transistor High-Frequency Low-Noise Amplifier, Differential Amplifier Applications

Features • Composite type with 2 transistors contained in the MCP package currently in use, improving the mounting efficiency greatly • The FH105A is formed with two chips, being equivalent to the 2SC5245A, placed in one package • Optimal for differential amplification due to excellent thermal

文件：67.68 Kbytes 页数：6 Pages

SANYO

三洋