CE conformity

FEATURES J J I4 « CE conformity * Built to meet European Standard BS EN 60335-2-45 ! * Full power range from 12 to 50 watt * Wide choice of input voltages * “Thermally balanced” fixed setting and “In Handle” adjustable temperature models * Wide range of soldering and desoldering-b

文件：598.09 Kbytes 页数：8 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

丝印：SK2；Package：PowerDI3333-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  Backlighting  Power management functions  DC-DC converters Features and Be

文件：660.66 Kbytes 页数：8 Pages

DIODES

美台半导体

丝印：SK2；Package：PowerDI3333-8；30V N-CHANNEL ENHANCEMENT MODE MOSFET

Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications  Backlighting  Power management functions  DC-DC converters Features and Be

文件：660.66 Kbytes 页数：8 Pages

DIODES

美台半导体

Half controlled bridge rectifier IGBT braking chopper

Features • One screw mounting hole • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT brake chopper technology • CAL technology free-wheeling diode chopper

文件：306.91 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

IGBT module

Features • One screw mounting module • Solder free mounting with Press-Fit terminals • Fully compatible with SEMITOP® 2 and 3 Press-Fit • Improved thermal performances by aluminum oxide substrate • Trench4 IGBT technology • CAL4F diode technology • Integrated PTC temperature sensor • UL

文件：238.21 Kbytes 页数：4 Pages

SEMIKRON

赛米控丹佛斯

3-phase bridge inverter

Features • One screw mounting module • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT technology • CAL technology FWD • Integrated NTC temperature sensor Typical Applications* • Inverter up to 42 kVA • Typ. motor power 18,5k

文件：306.81 Kbytes 页数：2 Pages

SEMIKRON

赛米控丹佛斯

Half-Bridge (Full SiC)

Features*  Optimized design for superior thermal performance  Extremely low inductance design  Press-Fit contact technology  1200V Planar Gen3 SiC MOSFET  Simple to drive with +15V gate voltage  Optimized switching stability thanks to module integrated gate resistors  Integrated NT

文件：1.05884 Mbytes 页数：7 Pages

SEMIKRON

赛米控丹佛斯

3-Level TNPC

Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 1200V Trench IGBT4 Fast (F4) • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 6

文件：1.2142 Mbytes 页数：9 Pages

SEMIKRON

赛米控丹佛斯

isc Schottky Barrier Rectifier

FEATURES ·Multi-layer Metal -Silicon Potential Structure ·Low Leakage Current ·High Current Capability, High Efficiency ·High Junction Temperature Capability

文件：277 Kbytes 页数：2 Pages

ISC

无锡固电

Surface Mount Schottky Rectifiers- Common Cathode

Nominal Current 20 A Repetitive peak reverse voltage 20...100 V Plastic case TO-263 Weight approx. 1.6 g Plastic material has UL classification 94V-0 Standard packaging taped and reeled

文件：117.04 Kbytes 页数：2 Pages

DIOTEC

德欧泰克