Half-Bridge (Full SiC)

Features*  Optimized design for superior thermal performance  Extremely low inductance design  Press-Fit contact technology  1200V Planar Gen3 SiC MOSFET  Simple to drive with +15V gate voltage  Optimized switching stability thanks to module integrated gate resistors  Integrated NT

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SEMIKRON

赛米控丹佛斯

SiC全碳化硅功率模块

• Optimized design for superior thermal performance\n• Extremely low inductance design\n• Press-Fit contact technology\n• 1200V Planar Gen3 SiC MOS\n• Simple to drive with +15V gate voltage \n• Integrated NTC temperature sensor\n• UL recognized file no. E 63 532;

Semikron-DANFOSS

赛米控丹佛斯

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