丝印：SK26；Package：SMA；Surface Mount Schottky Barrier Rectifier

文件：417.31 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：SK26；Package：DO-214AA；2 Amp Schottky Rectifier 20 to 100 Volts

文件：643.19 Kbytes 页数：2 Pages

LEIDITECH

雷卯电子

丝印：SK28；Package：DO-214AA；2 Amp Schottky Rectifier 20 to 100 Volts

文件：613.57 Kbytes 页数：3 Pages

LEIDITECH

雷卯电子

丝印：SK28；Package：SMA；Surface Mount Schottky Barrier Rectifier

文件：417.31 Kbytes 页数：3 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：SK28；Package：DO-214AA；2 Amp Schottky Rectifier 20 to 100 Volts

文件：643.19 Kbytes 页数：2 Pages

LEIDITECH

雷卯电子

Half controlled bridge rectifier IGBT braking chopper

Features • One screw mounting hole • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT brake chopper technology • CAL technology free-wheeling diode chopper

文件：306.91 Kbytes 页数：2 Pages

Semikron

赛米控丹佛斯

IGBT module

Features • One screw mounting module • Solder free mounting with Press-Fit terminals • Fully compatible with SEMITOP® 2 and 3 Press-Fit • Improved thermal performances by aluminum oxide substrate • Trench4 IGBT technology • CAL4F diode technology • Integrated PTC temperature sensor • UL

文件：238.21 Kbytes 页数：4 Pages

Semikron

赛米控丹佛斯

3-phase bridge inverter

Features • One screw mounting module • Fully compatible with SEMITOP® 1,2,3 • Improved thermal performances by aluminium oxide substrate • Trench IGBT technology • CAL technology FWD • Integrated NTC temperature sensor Typical Applications* • Inverter up to 42 kVA • Typ. motor power 18,5k

文件：306.81 Kbytes 页数：2 Pages

Semikron

赛米控丹佛斯

Half-Bridge (Full SiC)

Features*  Optimized design for superior thermal performance  Extremely low inductance design  Press-Fit contact technology  1200V Planar Gen3 SiC MOSFET  Simple to drive with +15V gate voltage  Optimized switching stability thanks to module integrated gate resistors  Integrated NT

文件：1.05884 Mbytes 页数：7 Pages

Semikron

赛米控丹佛斯

3-Level TNPC

Features* • Optimized design for superior thermal performances • Low inductive design • Press-Fit contact technology • 1200V Trench IGBT4 Fast (F4) • 650V Trench IGBT3 (E3) • Robust and soft switching CAL4F diode technology • Integrated NTC temperature sensor • UL recognized file no. E 6

文件：1.2142 Mbytes 页数：9 Pages

Semikron

赛米控丹佛斯