首页 >SIHG47N60E>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=45.8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=65mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelSuperJunctionPowerMOSFET | HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司 | HMSEMI | ||
N-ChannelEnhancementModeMOSFET | MICROSS MICROSS | MICROSS | ||
N-ChannelEnhancementModeMOSFET | ICEMOSIcemos Technology Icemos 技术 | ICEMOS | ||
N-ChannelMOSFETTransistor DESCRITION •HighPeakCurrentCapability FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤83mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??1)PowerMOSFET CoolMOS™1)PowerMOSFET LowRDSon,highVDSS SuperjunctionMOSFET Features •3rdgenerationSuperjunctionpowerMOSFET -highblockingcapability -lowestresistance -avalancheratedforunclampedinductiveswitching(UIS) -lowthermalresistanceduetoreducedchipthic | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Swi | VishayVishay Siliconix 威世科技 | Vishay | ||
EFSeriesPowerMOSFETwithFastBodyDiode | VishayVishay Siliconix 威世科技 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
EFSeriesPowerMOSFETwithFastBodyDiode FEATURES •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •IncreasedrobustnessduetolowQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordef | VishayVishay Siliconix 威世科技 | Vishay | ||
N-ChannelMOSFETTransistor DESCRITION •HighPeakCurrentCapability FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤83mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOSPowerTransistor CoolMOS™PowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
SIHG47N60E
- 制造商：
VISHAY
- 制造商全称：
Vishay Siliconix
- 功能描述：
E Series Power MOSFET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay(威世) |
23+ |
标准封装 |
22348 |
原厂直销,大量现货库存,交期快。价格优,支持账期 |
询价 | ||
VISHAY |
2019 |
TO-247 |
19700 |
INFINEON品牌专业原装优质 |
询价 | ||
VISHAY |
1430+ |
TO-247 |
9000 |
绝对原装进口现货可开增值税发票 |
询价 | ||
VISHAY |
18+ |
TO-247 |
85600 |
保证进口原装可开17%增值税发票 |
询价 | ||
VISHAY/威世 |
14+ |
TO247 |
28837 |
进口原管现货/25 |
询价 | ||
23+ |
N/A |
45980 |
正品授权货源可靠 |
询价 | |||
VB |
2019 |
TO-247AC |
55000 |
绝对原装正品假一罚十! |
询价 | ||
VISHAY |
2020+ |
TO-247 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
VISHAY/威世 |
21+ |
TO247 |
50000 |
终端可免费提供样品,欢迎咨询 |
询价 | ||
VISHAY |
22+ |
TO-247 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 |
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