CoolMOS Power Transistor

CoolMOS™ Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial g

文件：382.75 Kbytes 页数：12 Pages

INFINEON

英飞凌

丝印：47N60CFD；Package：PG-TO247；CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according

文件：622.42 Kbytes 页数：13 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

DESCRITION • High Peak Current Capability FEATURES • Static drain-source on-resistance: RDS(on)≤83mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.84 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Periodic avalanche rated • Qualified for industrial grade applications according

文件：622.42 Kbytes 页数：13 Pages

INFINEON

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS™ CFD series combines the experience of the leading SJ MOSFET supplier with high class innovation.\n Replacement for • Fourth series of CoolMOS™ market entry in 2004\n• Fast Body Diode, Qrr 1/10th of C3 series, Vth 4 V, g fs high, Rg low\n• Specific for phase-shift ZVS and DC-AC power applications\n\n优势:\n• Improved efficiency\n• More efficient, more compact, lighter and cooler\n• Outstanding reliability with prov;

Infineon

英飞凌