E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS •

文件：185.76 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 64mΩ(Max)@VGS= 10V DESCRIPTION ·Switch Mode Power Supply (SMPS) ·Uninterruptible Power Supply (UPS) ·Power Factor Correction (PFC)

文件：356.1 Kbytes 页数：3 Pages

ISC

无锡固电

iscN-Channel MOSFET Transistor

文件：445.34 Kbytes 页数：2 Pages

ISC

无锡固电

E Series Power MOSFET

FEATURES • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) • Material categorization: for definitions of compliance    please see www.vishay.com/doc?99912 APPLICATIONS •

文件：185.76 Kbytes 页数：8 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：218.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET

文件：218.87 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司

E Series Power MOSFET with Fast Body Diode

文件：152.37 Kbytes 页数：7 Pages

VISHAYVishay Siliconix

威世威世科技公司

iscN-Channel MOSFET Transistor

文件：445.7 Kbytes 页数：2 Pages

ISC

无锡固电

EF Series Power MOSFET with Fast Body Diode

文件：192.36 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司

EF Series Power MOSFET with Fast Body Diode

文件：225.68 Kbytes 页数：10 Pages

VISHAYVishay Siliconix

威世威世科技公司