N-Channel MOSFET Transistor

DESCRITION • High Peak Current Capability FEATURES • Static drain-source on-resistance: RDS(on)≤83mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

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ISC

无锡固电

isc N-Channel MOSFET Transistor

文件：383.28 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS??1) Power MOSFET

CoolMOS™ 1) Power MOSFET Low RDSon, high VDSS Superjunction MOSFET Features • 3rd generation Superjunction power MOSFET - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thic

文件：152.89 Kbytes 页数：4 Pages

IXYS

艾赛斯

DESIGN/PROCESS CHANGE NOTIFICATION

Description SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conducti

文件：298.83 Kbytes 页数：14 Pages

Fairchild

仙童半导体