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SIHG15N60E

iscN-Channel MOSFET Transistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHG15N60E

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHG15N60E_V01

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHG15N60E-GE3

E Series Power MOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHP15N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半导体

SIHP15N60E

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SIHP15N60E

ESeriesPowerMOSFET

FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance   pleaseseewww.vishay.com/doc?99912 APPLICATIONS •

VishayVishay Siliconix

威世科技威世科技半导体

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKB15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology

•30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKB15N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKP15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SKW15N60

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode

FastIGBTinNPT-technologywithsoft,fastrecoveryanti-parallelEmCondiode •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationso

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA15N60CFD

CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode

Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CRTTV

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA15N60CFD

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI15N60CFD

iscN-ChannelMOSFETTransistor

•DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI15N60CFD

CoolMOSTMPowerTransistorIntrinsicfast-recoverybodydiode

Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDECfortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CRTTV

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP15N60CFD

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

供应商型号品牌批号封装库存备注价格
VISHAY
20+
TO-247
1675
就找我吧!--邀您体验愉快问购元件!
询价
Vishay Siliconix
22+
TO2473
9000
原厂渠道,现货配单
询价
Vishay Siliconix
2022+
TO-247-3
38550
全新原装 支持表配单 中国著名电子元器件独立分销
询价
Vishay Siliconix
23+
SMD
67000
原装正品实单可谈 库存现货
询价
VISHAY(威世)
23+
TO247
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
VishayVishay
NEW-
MOSFETs
100000
Trans MOSFET N-CH 800V 13A Tube
询价
VISHAY/威世
23+
TO247
50000
全新原装正品现货,支持订货
询价
V
23+
TO-247
10000
公司只做原装正品
询价
VISHAY/威世
23+
TO247
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
21+
TO247
10000
原装现货假一罚十
询价
更多SIHG15N60E供应商 更新时间2024-9-26 14:15:00