首页 >SIHG17N80E>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHG17N80E | E Series Power MOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | |
SIHG17N80E | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabili | IXYS IXYS Integrated Circuits Division | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=17A@TC=25℃ ·DrainSourceVoltage :VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.6Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications. | IXYS IXYS Integrated Circuits Division | IXYS | ||
HiPerFETPowerMOSFETsQ-Class HiPerFET™PowerMOSFETsQ-Class N-ChannelEnhancementMode AvalancheRated,Highdv/dt,LowQg Features •IXYSadvancedlowQgprocess •Internationalstandardpackages •LowRDS(on) •UnclampedInductiveSwitching(UIS)rated •Fastswitching •MoldingepoxiesmeetUL94V-0flammabili | IXYS IXYS Integrated Circuits Division | IXYS | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor ·FEATURES ·Lowdrain-sourceon-resistance: RDS(ON)=0.29Ω(MAX) ·Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=0.25mA) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation ·DESCRITION ·SwitchingVoltageRegulators | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS •Serverandtelecompower | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
EFSeriesPowerMOSFETWithFastBodyDiode | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
ESeriesPowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS • | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY(威世) |
2112+ |
TO-247AC |
105000 |
500个/管一级代理专营品牌!原装正品,优势现货,长期 |
询价 | ||
VISHAY |
20+ |
TO-247 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
VIHSAY |
22+ |
TO-247 |
28600 |
只做原装正品现货假一赔十一级代理 |
询价 | ||
VIHSAY |
21+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
VIHSAY |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Vishay Siliconix |
22+ |
TO2473 |
9000 |
原厂渠道,现货配单 |
询价 | ||
VIHSAY |
2022 |
TO-247 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
VIHSAY |
1939+ |
TO-247 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
VISHAY/威世 |
24+23+ |
TO-247 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 | ||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
询价 |
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