首页 >SIHA25N60EFL>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SIHA25N60EFL | E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES •Reducedfigure-of-merit(FOM):RonxQg •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •IncreasedrobustnessduetolowQrr •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcateg | VishayVishay Siliconix 威世科技 | Vishay | |
SIHA25N60EFL | iscN-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SIHA25N60EFL | E Series Power MOSFET with Fast Body Diode and Low Gate Charge | VishayVishay Siliconix 威世科技 | Vishay | |
E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES •Reducedfigure-of-merit(FOM):RonxQg •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •IncreasedrobustnessduetolowQrr •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcateg | VishayVishay Siliconix 威世科技 | Vishay | ||
E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES •Reducedfigure-of-merit(FOM):RonxQg •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •IncreasedrobustnessduetolowQrr •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcateg | VishayVishay Siliconix 威世科技 | Vishay | ||
E Series Power MOSFET with Fast Body Diode and Low Gate Charge FEATURES •Reducedfigure-of-merit(FOM):RonxQg •FastbodydiodeMOSFETusingEseries technology •Reducedtrr,Qrr,andIRRM •IncreasedrobustnessduetolowQrr •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcateg | VishayVishay Siliconix 威世科技 | Vishay | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFET–N-Channel,SUPREMOS600V,25A,126m Description TheSUPREMOS®MOSFETisONSemiconductor’snext generationofhighvoltagesuper−junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon−re | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO | DACO | ||
MOSFET–N-Channel,SUPREMOS600V,25A,126m Description TheSUPREMOS®MOSFETisONSemiconductor’snext generationofhighvoltagesuper−junction(SJ)technologyemploying adeeptrenchfillingprocessthatdifferentiatesitfromthe conventionalSJMOSFETs.Thisadvancedtechnologyandprecise processcontrolprovideslowestRspon−re | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=126mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC- | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelSupreMOS짰MOSFET600V,25A,125m廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelSupreMOS짰MOSFET600V,25A,125m廓 | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=25A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.125Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET25AMPERES600VOLTSRDS(on)=0.21OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI | ||
Triac | KODENSHIKodenshi Group 可天士可天士光电子集团 | KODENSHI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
isc |
2024 |
TO-220F-THIN |
3000 |
国产品牌isc,可替代原装 |
询价 | ||
VISHAY |
20+ |
TO-220 |
1675 |
就找我吧!--邀您体验愉快问购元件! |
询价 | ||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
询价 | ||
VISHAY/威世 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
询价 | |||
Vishay Siliconix |
2022+ |
TO-220-3 整包 |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
6328 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
Vishay Siliconix |
23+ |
SMD |
67000 |
原装正品实单可谈 库存现货 |
询价 | ||
VISHAY/威世 |
TO-220F |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | |||
Vishay |
NEW- |
MOSFETs |
100000 |
SIHA30N60AEL-GE3 Vishay MOSFETs Transistor N-CH 60 |
询价 | ||
Vishay Siliconix |
21+ |
TO-220-3 |
12824 |
专业分立半导体,原装渠道正品现货 |
询价 |
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