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SDS120J015B3

3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:738.37 Kbytes 页数:7 Pages

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SDS120J015C3

丝印:DS120015C3;Package:TO-220-2L;3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.1837 Mbytes 页数:9 Pages

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SDS120J015H3

丝印:DS120015H3;Package:TO-247-2L;3rd Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.18174 Mbytes 页数:9 Pages

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SDS120J015H5

丝印:DS120015H5;Package:TO-247-2L;5th Generation 1200V/15A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:593.91 Kbytes 页数:9 Pages

SANAN

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SDS120J020B3

3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery H igh speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:740.51 Kbytes 页数:7 Pages

SANAN

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SDS120J020G3

丝印:DS120020G3;Package:TO-247-3L;3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.25686 Mbytes 页数:9 Pages

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SDS120J020H3

丝印:DS120020H3;Package:TO-247-2L;3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant

文件:1.0663 Mbytes 页数:9 Pages

SANAN

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SDS120J020H5

丝印:DS120020H5;Package:TO-247-2L;5th Generation 1200V/20A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:641.37 Kbytes 页数:9 Pages

SANAN

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SDS120J027H3

3rd Generation 1200V/2 7 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.18165 Mbytes 页数:9 Pages

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SDS120J030B3

3rd Generation 120 0 V/ 3 0 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:745.46 Kbytes 页数:7 Pages

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技术参数

  • VRM [V]:

    85

  • VR [V]:

    80

  • IFM [mA]:

    300

  • IO[mA]:

    100

  • VF [V]_Max.:

    1.2

  • VF [V]@IF [mA]:

    100

  • IR [uA]_Max.:

    0.5

  • IR [uA]_VR [V]:

    80

  • trr [ns]_Max.:

    4

  • trr [ns]_VR [V]:

    6

  • trr [ns]@IF [mA]:

    10

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SOT323
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更多SDS1供应商 更新时间2025-12-23 16:40:00