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SDS120J030G3

丝印:DS120030G3;Package:TO-247-3L;3rd Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.19612 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J030H3

丝印:DS120030H3;Package:TO-247-2L;3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.13833 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J030H5

5th Generation 1200V/30A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:658 Kbytes 页数:9 Pages

SANAN

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SDS120J040B3

3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:856.78 Kbytes 页数:7 Pages

SANAN

三安光电

SDS120J040G3

丝印:DS120040G3;Package:TO-247-3L;3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.19742 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J040H3

丝印:DS120040H3;Package:TO-247-2L;3rd Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.23794 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J040H5

丝印:DS120040H5;Package:TO-247-2L;5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:599.39 Kbytes 页数:9 Pages

SANAN

三安光电

SDS120J040J5

丝印:DS120040J5;Package:TO-247-2L;5th Generation 1200V/40A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:591.48 Kbytes 页数:9 Pages

SANAN

三安光电

SDS120J050B3

3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Car bide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:854.74 Kbytes 页数:7 Pages

SANAN

三安光电

SDS120J050H3

丝印:DS120050H3;Package:TO-247-2L;3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.22875 Mbytes 页数:9 Pages

SANAN

三安光电

技术参数

  • VRM [V]:

    85

  • VR [V]:

    80

  • IFM [mA]:

    300

  • IO[mA]:

    100

  • VF [V]_Max.:

    1.2

  • VF [V]@IF [mA]:

    100

  • IR [uA]_Max.:

    0.5

  • IR [uA]_VR [V]:

    80

  • trr [ns]_Max.:

    4

  • trr [ns]_VR [V]:

    6

  • trr [ns]@IF [mA]:

    10

供应商型号品牌批号封装库存备注价格
AUK
24+
SOT323
9700
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2447
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AUK
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SOT-323
10000
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8560
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AUK
24+
NA/
14850
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询价
更多SDS1供应商 更新时间2025-11-4 17:36:00