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SDS120J005B3

3rd Generation 1200V/5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:735.55 Kbytes 页数:7 Pages

SANAN

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SDS120J005C3

丝印:DS120005C3;Package:TO-220-2L;3 rd Generation 1200V 5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.18145 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J005D3

丝印:DS120005D3;Package:TO-252-2L;3rd Generation 1200V/5A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.1397 Mbytes 页数:9 Pages

SANAN

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SDS120J010B3

3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:857.45 Kbytes 页数:7 Pages

SANAN

三安光电

SDS120J010C3

丝印:DS120010C3;Package:TO-220-2L;3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.23812 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J010C5

丝印:DS120010C5;Package:TO-220-2L;5th Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant

文件:590.04 Kbytes 页数:9 Pages

SANAN

三安光电

SDS120J010D3

丝印:DS120010D3;Package:TO-252-2L;3rd Generation 1200V/10 A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.19501 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J010E3

丝印:DS120010E3;Package:TO-263-2L;3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.21086 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J010G3

丝印:DS120010G3;Package:TO-247-3L;3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.19524 Mbytes 页数:9 Pages

SANAN

三安光电

SDS120J010H3

丝印:DS12000H3;Package:TO-247-2L;3rd Generation 1200V/10A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

文件:1.23954 Mbytes 页数:9 Pages

SANAN

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技术参数

  • VRM [V]:

    85

  • VR [V]:

    80

  • IFM [mA]:

    300

  • IO[mA]:

    100

  • VF [V]_Max.:

    1.2

  • VF [V]@IF [mA]:

    100

  • IR [uA]_Max.:

    0.5

  • IR [uA]_VR [V]:

    80

  • trr [ns]_Max.:

    4

  • trr [ns]_VR [V]:

    6

  • trr [ns]@IF [mA]:

    10

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更多SDS1供应商 更新时间2025-11-3 9:31:00