| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
Marking：DS120005D3；Package：TO-252-2L；3 Generation 1200V/ 5 A SiC Schottky Barrier Diode AECQ101qualified RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScomp | SANANSanan Optoelectronics Co., Ltd 三安光电三安光电股份有限公司 | SANAN | ||
Marking：DS120005D3；Package：TO-252-2L；3rd Generation 1200V/5A SiC Schottky Barrier Diode RevolutionarysemiconductormaterialSiliconCarbide(SiC) Noreverserecovery Highspeedswitchingperformance Temperatureindependentswitchingbehavior Systemcost/sizesavingsduetoreducedcoolingrequirements Junctiontemperaturerangefrom55to175 RoHScompliant | SANANSanan Optoelectronics Co., Ltd 三安光电三安光电股份有限公司 | SANAN |
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