丝印：DS120020H3；Package：TO-247-2L；3 rd Generation 1200V/20A SiC Schottky Barrier Diode

AEC Q 101 qualified Revolutionary semiconductor material Silicon Carbide (SiC) N o reverse recovery High speed switching performance Temperature independen t switching behavior System cost / size savings due to reduced cooling requirements J unction temperature range from 55 to 175 RoHS com

文件：1.19289 Mbytes 页数：9 Pages

SANAN

三安光电

丝印：DS120020H3；Package：TO-247-2L；3rd Generation 1200V/20A SiC Schottky Barrier Diode

Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant

文件：1.0663 Mbytes 页数：9 Pages

SANAN

三安光电