3rd Generation 1200V/50A SiC Schottky Barrier Diode

Revolutionary semiconductor material Silicon Car bide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant

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SANAN

三安光电

碳化硅二极管

The SDS120J050B3 SiC Schottky Barrier Diode(SBD)has been developed using Sanan’s advanced 3rd generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency, higher operation temperature and lower loss and can be operated at higher frequency than Si-based • Revolutionary semiconductor material - Silicon Carbide(SiC)\n• High-speed switching performance\n• System cost / size savings due to reduced cooling requirements\n• RoHS compliant;

HunanSanan

湖南三安

AUK

上传：深圳市捷盛源泰业科技有限公司

存储卡

SANDISK

闪迪

上传：深圳市金嘉锐电子有限公司

存储卡

SANDISK

闪迪

上传：深圳市金嘉锐电子有限公司