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SCT1000N170AG数据手册ST中文资料规格书
SCT1000N170AG规格书详情
描述 Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material, combined with the device’s housing in the proprietary HiP247 package, allows designers to use an industry standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications.
特性 Features
• AEC-Q101 rev. C qualified
• Very fast and robust intrinsic body diode
• Low capacitances
• Very high operating junction temperature capability (TJ = 200 °C)
技术参数
- 制造商编号
：SCT1000N170AG
- 生产厂家
：ST
- Package
：HIP247
- Grade
：Automotive
- VDSS_nom(V)
：1700
- RDS(on)_max(mΩ)
：1300
- Drain Current (Dc)_max(A)
：7
- PTOT_max(W)
：96
- Qg_typ(nC)
：13.3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
24+ |
NA/ |
3000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
ON |
1126+ |
WDFN8 |
9000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
Rochester |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
询价 | ||
ON |
23+ |
WDFN-8 |
2968 |
原厂原装正品 |
询价 | ||
ON/安森美 |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
MINI |
24+ |
SMD其他电子元 |
17 |
一级代理全新原装现货 |
询价 | ||
ST |
23+ |
TO-247 |
16900 |
正规渠道,只有原装! |
询价 | ||
onsemi |
24+ |
- |
252000 |
原厂全新正品现货供应 |
询价 | ||
台湾华仑 |
24+ |
NA |
18000 |
原装正品 有挂有货 假一赔十 |
询价 | ||
24+ |
3000 |
自己现货 |
询价 |
