650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：437.31 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：442.48 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

650V/20A SiC Schottky Barrier Diode

Features Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Applications Power Factor C

文件：371.46 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

These dual N Channel enhancement mode power fieldeffect transistors are using trench DMOS technology.

文件：963.9 Kbytes 页数：5 Pages

SKTECHNOLGYSHIKE Electronics

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