650V/20A SiC Schottky Barrier Diode

Features Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements Applications Power Factor C

文件：371.46 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

High Frequency SMD Current Sensing Transformers

The SCS Series is an entirely new line in our high frequency transformer product line offering. These surface mount components are used for detecting the current passing directly through an applications conductor. They can accurately sense current flow in power supply circuits through a non-in

文件：1.84238 Mbytes 页数：5 Pages

BEL

丝印：SCS210AN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) Wide creepage distance = min. 5.10mm Applications ・ Factory Automation ・ EV Charger Station ・ PV Power Conditioner ・ Wireless Charger

文件：992.17 Kbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS210AN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Features 5) Wide creepage distance = min. 5.10mm 3) Negligible recovery time/current 2) Low forward voltage 4) Temperature independent switching behavior 1) AEC-Q101 qualified Applications ・On Board Charger ・EV Charger ・DC/DC Converter ・Wireless Charger

文件：1.1247 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS210KN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior 4) Wide creepage distance = min. 5.10mm Applications ・ Factory Automation ・ PV Power Conditioner ・ Wireless Charger ・ EV Charger Station

文件：1.02095 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS210KN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Features 5) Wide creepage distance = min. 5.10mm 3) Negligible recovery time/current 2) Low forward voltage 4) Temperature independent switching behavior 1) AEC-Q101 qualified Applications ・On Board Charger ・EV Charger ・DC/DC Converter ・Wireless Charger

文件：3.62184 Mbytes 页数：10 Pages

ROHM

罗姆

Silicon Carbide Schottky Diode

FEATURES · Reduced Temperature Dependence · High-speed Switching Possible · Shorter Recovery Time APPLICATIONS · PFC Boost Topology · Data Center · Secondary Side Rectification

文件：299.29 Kbytes 页数：3 Pages

ISC

无锡固电

丝印：SCS212AN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1) Low forward voltage 3) Temperature independent switching behavior 2) Negligible recovery time/current 4) Wide creepage distance = min. 5.10mm Applications ・Factory Automation ・EV Charger Station ・PV Power Conditioner ・Wireless Charger

文件：1.0212 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS212AN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Applications ・On Board Charger ・EV Charger ・DC/DC Converter ・Wireless Charger Features 1) AEC-Q101 qualified 5) Wide creepage distance = min. 5.10mm 3) Negligible recovery time/current 2) Low forward voltage 4) Temperature independent switching behavior

文件：1.01626 Mbytes 页数：10 Pages

ROHM

罗姆

SiC Schottky Barrier Diode

FEATURES · Reduced Temperature Dependence · High-speed Switching Possible · Shorter Recovery Time APPLICATIONS · Secondary Side Rectification · PFC Boost Topology · Data Center

文件：242.25 Kbytes 页数：3 Pages

ISC

无锡固电