4-Way Coaxial Power Splitter, 18 to 50 GHz

FEATURES Low Insertion Loss Compact Package APPLICATIONS Test Lab Sub-assemblies Test Instrumentations

文件：248.56 Kbytes 页数：2 Pages

ERAVANT

1200V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：403.01 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

1200V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：357.24 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

1200V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：360.82 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

1200V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：341.88 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

丝印：SCS205KN；Package：TO-263-2L；SiC Schottky Barrier Diode

Features 1) Low forward voltage 2) Negligible recovery time/current 3) Temperature independent switching behavior 4) Wide creepage distance = min. 5.10mm Applications ・Factory Automation ・PV Power Conditioner ・Wireless Charger ・EV Charger Station

文件：1.02088 Mbytes 页数：10 Pages

ROHM

罗姆

丝印：SCS205KN；Package：TO-263-2L；Automotive Grade SiC Schottky Barrier Diode

Features 1) AEC-Q101 qualified 2) Low forward voltage 3) Negligible recovery time/current 4) Temperature independent switching behavior 5) Wide creepage distance = min. 5.10mm Applications ・On Board Charger ・DC/DC Converter ・Wireless Charger ・EV Charger

文件：1.01611 Mbytes 页数：10 Pages

ROHM

罗姆

650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：437.48 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：437.31 Kbytes 页数：5 Pages

GWSEMI

唯圣电子

650V/20A SiC Schottky Barrier Diode

Features Halogen Free, RoHS Compliant Low Forward Voltage (VF) Shorter recovery time High speed switching High surge current capability Enabling higher frequency and increased power density System efficiency improvement System cost and size savings due to the reduced cooling requirements

文件：442.48 Kbytes 页数：5 Pages

GWSEMI

唯圣电子