丝印：SC0；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET – ESD Protected

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：535.58 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC0；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET – ESD Protected

Features  Advanced Trench Process Technology  Specially Designed for Switch Load, PWM Application, etc.  ESD Protected 2KV HBM  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard

文件：535.58 Kbytes 页数：9 Pages

PANJIT

強茂

丝印：SC02J120A；Package：TO-220C-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：558.52 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC02J120A；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：558.52 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC04J065A；Package：TO-220C-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：529.25 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC04J065A；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：529.25 Kbytes 页数：8 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC06J065A；Package：TO-220C-2L；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：627.07 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC06J065A；SiC Schottky Diode

APPLICATIONS ⚫Solar Inverters ⚫Switch Mode Power Supplies ⚫High Voltage DC/DC Converters ⚫Battery Chargers ⚫Motor Drives ⚫Uninterruptable power supplies FEATURES ⚫High Blocking Voltage ⚫Zero Reverse Recovery Current ⚫Zero Forward Recovery Voltage ⚫High-Frequency Operation ⚫Temperatur

文件：627.07 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：997.33 Kbytes 页数：24 Pages

TI

德州仪器

丝印：SC00SEP；Package：TSSOP；SN54SC4T00-SEP Radiation Tolerant, Quadruple 2-Input Positive-NAND Gates With Integrated Translation

1 Features • Vendor item drawing available, VID V62/23627-01XE • Total ionizing dose characterized at 30 krad (Si) – Total ionizing dose radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad (Si) • Single-event effects (SEE) characterized: – Single event latch-up (SEL)

文件：1.05358 Mbytes 页数：25 Pages

TI

德州仪器