ESD24V23T-2LC

Marking：SCH；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature ProtectstwobidirectionalI/Olines Workingvoltage:3.3、5V、24V Lowclampingvoltage Lowleakagecurrent IEC61000-4-2(ESD)±15kV(air),±8kV(contact) IEC61000-4-4(EFT)40A(5/50ηs) Applications PortableElectronics CellularHandsetsandAccessories IndustrialControls Porta

ESD24V23TS-2LC

Marking：SCH；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified ProtectstwobidirectionalI/Olines LowClampingVoltage WorkingVoltages:3.3V,5Vand24V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2(ESD)±15kV(air),±8kV(contact) Applications PortableElectron

LMR36503MSCERPERQ1

Marking：SCEQ；Package：VQFN-HR；LMR36503E-Q1 3V to 65V, 0.3A,Automotive, Grade 0, Synchronous Buck Converter Optimized for Size and Light Load Efficiency

1Features •AEC-Q100-qualifiedforautomotiveapplications: –Devicetemperaturegrade0:–40°Cto+150°C, TA •>70efficiencyat5mA –4μAIQ(switching)at24VINto3.3VOUT(fixed outputoption) •Miniaturedesignsizeandlowcomponentcost –2mm×2mmHotRod™packagewithwettable f

PBSS5350Z-Q

Marking：SC-73；Package：PB5350；50 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4350Z-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Highcol

PBSS5360Z-Q

Marking：SC-73；Package：P5360Z；60 V, 3 A PNP low VCEsat transistor

1.Generaldescription PNPlowVCEsattransistorinamediumpowerSOT223(SC-73)Surface-MountedDevice(SMD) plasticpackage. NPNcomplement:PBSS4360Z 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsat •HighcollectorcurrentcapabilityICandICM •Highenergy

PESD2CANFD24LU-Q

Marking：SC-70；Package：3P；ESD protection for in-vehicle networks

1.Generaldescription ESDprotectiondeviceinasmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackage designedtoprotecttwoautomotivein-vehiclenetworkbuslinesfromthedamagecausedby ElectroStaticDischarge(ESD)andothertransients. 2.Featuresandbenefits •Revers

PJS6600_S1_00001

Marking：SC0；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET – ESD Protected

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ESDProtected2KVHBM LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PJS6600_S2_00001

Marking：SC0；Package：SOT-23-6L；30V Complementary Enhancement Mode MOSFET – ESD Protected

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. ESDProtected2KVHBM LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PJS6601_S1_00001

Marking：SC1；Package：SOT-23-6L；20V Complementary Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard

PJS6601_S2_00001

Marking：SC1；Package：SOT-23-6L；20V Complementary Enhancement Mode MOSFET

Features AdvancedTrenchProcessTechnology SpeciallyDesignedforSwitchLoad,PWMApplication,etc. LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard