SCS320AHG

Marking：SCS320AH；Package：TO-220ACP；SiC Schottky Barrier Diode

Features 1)Shorterrecoverytime 2)Reducedtemperaturedependence 3)High-speedswitchingpossible 4)Highsurgecurrentcapability

SCT011HU75G3AG

Marking：SCT01175G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 750 V, 11.4 mΩ typ., 110 A in an HU3PAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT020HU120G3AG

Marking：SCT20U120G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mΩ typ., 100 A in an HU3PAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT040H120G3AG

Marking：SCT40H12G3AG；Package：H2PAK-7；Automotive-grade silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an H²PAK-7 package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT040HU65G3AG

Marking：SCT40HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 40 mΩ typ., 30 A in an HU3PAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT040W120G3-4

Marking：SCT40W120G34；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 40 mΩ typ., 40 A in an HiP247-4 package

Features •Veryfastandrobustintrinsicbodydiode •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) Applications •Switchingmodepowersupply •Powersupplyforrenewableenergy

SCT040W65G3-4AG

Marking：SCT040W65G3；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 45 mΩ typ., 30 A in an HiP247-4 package

Features •AEC-Q101qualified •Veryfastandrobustintrinsicbodydiode •Extremelylowgatechargeandinputcapacitance •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •

SCT055HU65G3AG

Marking：SCT55HU65G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 650 V, 58 mΩ typ., 30 A in an HU3PAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT060HU75G3AG

Marking：SCT06075G3AG；Package：HU3PAK；Automotive-grade silicon carbide Power MOSFET 750 V, 58 mΩ typ., 30 A in an HU3PAK package

Features •AEC-Q101qualified •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryfastandrobustintrinsicbodydiode •Sourcesensingpinforincreasedefficiency Applications •Maininverter(electrictraction) •DC/DCconverterforEV/HEV

SCT070W120G3-4

Marking：SCT70W120G34；Package：HiP247-4；Silicon carbide Power MOSFET 1200 V, 63 mΩ typ., 30 A in an HiP247-4 package

Features •Veryfastandrobustintrinsicbodydiode •VerylowRDS(on)overtheentiretemperaturerange •Highspeedswitchingperformances •Veryhighoperatingjunctiontemperaturecapability(TJ=200°C) •Sourcesensingpinforincreasedefficiency Applications •Switchingmodepow