TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

FEATURE ◾ Built-in bias resistor (R1=10kΩ) ◾ Small package for easy mounting. ◾ High reverse hFE ◾ Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ◾ Low on Resistance Ron=0.94Ω(TYP.)（@VI=7V） APPLICATION muting circuit , switching circuit

文件：131.8 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

带阻晶体管（PNP、NPN）

IDC

POWER TRANSISTORS(10A,60-100V,125W)

文件：204.6 Kbytes 页数：4 Pages

MOSPEC

统懋

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS

Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA

文件：217.86 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

POWER TRANSISTORS(10A,60-100V,80W)

DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP

文件：204.61 Kbytes 页数：4 Pages

MOSPEC

统懋