TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

FEATURE ◾ Built-in bias resistor(R1=2.2kΩ) ◾ Small package for easy mounting. ◾ High reverse hFE ◾ Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ◾ Low on Resistance Ron=0.70Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit

文件：129.34 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

SURFACE MOUNT TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR

文件：25.11 Kbytes 页数：1 Pages

RALTRONRaltron Electronics Corporation

拉隆

54-MHz 32-bit RX MCUs, built-in FPU, 88.56 DMIPS, up to 512-KB flash memory

文件：2.867 Mbytes 页数：177 Pages

RENESAS

瑞萨

MINIATURE FUSES - 5x20 mm

文件：60.42 Kbytes 页数：2 Pages

Littelfuse

力特

5x20 mm MINIATURE FUSES

文件：60.72 Kbytes 页数：2 Pages

Littelfuse

力特

Low voltage fast-switching PNP power transistor

Description The device is a PNP transistor manufactured using new “PB-HCD” (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage. Features • Very low collector-emitter saturation voltage • Hig

文件：185.66 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体