TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

FEATURE ◾ Built-in bias resistor(R1=2.2kΩ) ◾ Small package for easy mounting. ◾ High reverse hFE ◾ Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ◾ Low on Resistance Ron=0.70Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit

文件：129.34 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

带阻晶体管（PNP、NPN）

IDC

Resistor Built-in Transistor (PNP, NPN)

IDC

TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

FEATURE ◾ Built-in bias resistor(R1=2.2kΩ) ◾ Small package for easy mounting. ◾ High reverse hFE ◾ Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ◾ Low on Resistance Ron=0.70Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit

文件：129.34 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

TRANSISTOR WITH RESISTOR FOR MUTING APPLICATION SILICON NPN EPITAXIAL TYPE

FEATURE ◾ Built-in bias resistor(R1=2.2kΩ) ◾ Small package for easy mounting. ◾ High reverse hFE ◾ Small collector to emitter saturation voltage. VCE(sat)=10mV(TYP.)（@IC=10mA/IB=0.5mA） ◾ Low on Resistance Ron=0.70Ω(TYP.)（@VI=5V） APPLICATION muting circuit , switching circuit

文件：129.34 Kbytes 页数：4 Pages

ISAHAYA

谏早电子

SURFACE MOUNT TEMPERATURE COMPENSATED CRYSTAL OSCILLATOR

文件：25.11 Kbytes 页数：1 Pages

RALTRONRaltron Electronics Corporation

拉隆