丝印：RO；Package：SOT-89；Silicon Planar Epitaxial Transistor

FEATURES ● Suitable for output stage of 1 watts Amplifier ● Suitable flat package ● High DC current gain ● PC=1.0 to 2.0W(mounted on ceramic substrate) ● Complementary to 2SC2884

文件：173.3 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：RO；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Complementary to 2SC2884 Small Flat Package Audio Frequency Amplifier Application High DC Current Gain

文件：1.44181 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：RO；Package：SOT-89；Plastic-Encapsulated Transistor

FEATURES Complementary to 2SC2884

文件：420.7 Kbytes 页数：3 Pages

DGNJDZ

南晶电子

丝印：RO；Package：SOT-89；Plastic-Encapsulated Transistor

FEATURES ● Complementary to 2SC2884

文件：135.99 Kbytes 页数：3 Pages

BILIN

银河微电

丝印：RO；Package：X1-DFN1006-2；35V ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE

Features  Low Profile Package (0.53mm Max) and Ultra-Small PCB Footprint Area (1.08mm * 0.68mm Max) Suitable for Compact Portable Electronics  Provides ESD Protection per IEC 61000-4-2 Standard: Air ±14kV, Contact ±14kV  1 Channel of ESD Protection  Low Channel Input Capacitance  Totally

文件：426.68 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：RO；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Complementary to KTC4376 Small Flat Package High Current Application

文件：1.77687 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

丝印：RO；Package：SOT-89；PNP Transistors

■ Features ● 1W (Mounted on Ceramic Substrate) ● Small Flat Package ● Comlementary to KTC4376

文件：1.2535 Mbytes 页数：2 Pages

KEXIN

科信电子

丝印：RO；Package：SOT-23；NPN Silicon Epitaxial Planar Transistor

FEATURES • High power gain. APPLICATIONS • High frequency application. • HF,VHF band amplifier appilication.

文件：222.06 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：RO；Package：X2SON(DQN)；TLV7A03 Nanopower, 250nA IQ, 200mA IOUT, Low-Dropout Regulator With Fast Transient Response

1 Features • Ultra-low IQ: 250nA (typ), 400nA (max) • Shutdown IQ: 3nA (typ) • Excellent transient response (1mA to 50mA) –

文件：2.71339 Mbytes 页数：40 Pages

TI

德州仪器

丝印：RO；Package：SOT-23；N-Channel Enhancement MOSFET

Features ● VDS (V) = 30V ● ID = 5.8 A (VGS = 10V) ● RDS(ON)

文件：830.38 Kbytes 页数：5 Pages

YFWDIODE

佑风微