TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)

Muting And Switching Applications. ● High emitter-base voltage: VEBO = 25V (min) ● High reverse hFE: reverse hFE = 150 (typ.) (VCE = −2V, IC = −4mA) ● Low on resistance: RON = 1Ω (typ.) (IB = 5mA) ● With built-in bias resistors ● Simplify circuit design ● Reduce a quantity of parts and

文件：396.05 Kbytes 页数：9 Pages

TOSHIBA

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Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

文件：697.14 Kbytes 页数：9 Pages

TOSHIBA

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Bias resistor built-in transistor (BRT)

Application Scope：Muting\nPolarity：NPN\nInternal Connection：Single\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC 0.3 A \nCollector-emitter voltage VCEO 20 V ;

Toshiba

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Silicon NPN Epitaxial Type (PCT Process) Muting And Switching Applications

文件：697.14 Kbytes 页数：9 Pages

TOSHIBA

东芝

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置 描述：TRANS PREBIAS NPN 20V 0.3A SMINI

Toshiba Semiconductor and Storage