RMLV0816BGSD-4S2集成电路（IC）的存储器规格书PDF中文资料

描述 Description

The RMLV0816BGSD is a family of 8-Mbit static RAMs organized 524,288-word × 16-bit, fabricated by Renesas’s

high-performance Advanced LPSRAM technologies. The RMLV0816BGSD has realized higher density, higher

performance and low power consumption. The RMLV0816BGSD offers low power standby power dissipation;

therefore, it is suitable for battery backup systems. It is offered in 52pin TSOP (II).

特性 Features

 Single 3V supply: 2.4V to 3.6V

 Access time:

── Power supply voltage from 2.7V to 3.6V: 45ns (max.)

── Power supply voltage from 2.4V to 2.7V: 55ns (max.)

 Current consumption:

── Standby: 0.45µA (typ.)

 Equal access and cycle times

 Common data input and output

── Three state output

 Directly TTL compatible

── All inputs and outputs

 Battery backup operation