RM200DG-130S

HIGH VOLTAGE DIODE MODULE HIGH POWER SWITCHING USE INSULATED TYPE

HIGHPOWERSWITCHINGUSEINSULATEDTYPE ●IF...................................................................200A ●VRRM......................................................6500V ●HighInsulatedType ●2-elementinaPack ●AISiCBaseplate APPLICATION Tractiondrives,HighReliabi

RM200HA-20F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE APPLICATION Freewheeluse,Welders

RM200HA-24F

HIGH SPEED SWITCHING USE INSULATED TYPE

HIGHSPEEDSWITCHINGUSEINSULATEDTYPE APPLICATION Freewheeluse,Welders

RM200N120HD

Marking：200N120；Package：TO-263；120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RM200N120T2

Marking：200N120；Package：TO-220；120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RM200N120T7

Marking：200N120；Package：TO-247；120V N-Ch Power MOSFET

Feature HighSpeedPowerSmoothSwitching EnhancedBodydiodedv/dtcapability EnhancedAvalancheRuggedness 100%ISTested,100%RgTested LeadFree

RM2020ES6

Marking：2020；Package：SOT-23-6L；N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vos=20V,lp=0.75A Rds(on)6KV,HBM(Gate-SourceZenner) Highpowerandcurrenthandingcapab

RM2020ES9

Marking：2020；Package：SOT-363-6L；N and P-Channel Enhancement Mode Power MOSFET

GeneralFeatures N-Channel Vds=20Vjo=0.75A Rds(on)

RM20C1A-XXF

HIGH SPEED SWITCHING USE INSULATED TYPE

MEDIUMPOWER,HIGHFREQUENCYUSEINSULATEDTYPE APPLICATION Freewheeluse,Welder

RM20C1A-XXS

MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE

MEDIUMPOWER,HIGHFREQUENCYUSEINSULATEDTYPE •IDCDCcurrent..................................20A •VRRMRepetitivepeakreversevoltage......................300/600V •trrReverserecoverytime.............0.4µs •InsulatedType APPLICATION Freewheeluse,Welder