7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regula

文件：361.53 Kbytes 页数：7 Pages

Intersil

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：309.27 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.3Ω(Max)@VGS= 5V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.32 Kbytes 页数：2 Pages

ISC

无锡固电

7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regula

文件：361.53 Kbytes 页数：7 Pages

Intersil

7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

Renesas

瑞萨