RFD7N10LESM中文资料Intersil数据手册PDF规格书

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49046.

特性 Features

• 7A, 100V

• rDS(ON) = 0.300Ω

• Temperature Compensating PSPICE® Model

• Can be Driven Directly from CMOS, NMOS, TTL Circuits

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175°C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”