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STLC3055

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STLC3055N

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

Description TheSTLC3055NisaSLICdevicespecificallydesignedforwirelesslocalloop(WLL)andISDNterminaladaptors(ISDN-TA)andVoIPapplications.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from5.5Vto12V)andselfge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STLC3055Q

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STLC3055QTR

WLL&ISDN-TASUBSCRIBERLINEINTERFACECIRCUIT

DESCRIPTION TheSTLC3055isaSLICdevicespecificallydesignedforWLL(WirelessLocalLoop)andISDNTerminalAdaptors.Oneofthedistinctivecharacteristicofthisdeviceistheabilitytooperatewithasinglesupplyvoltage(from+5.5Vto+15.8V)andselfgeneratethenegativebatterybymea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU3055L

N-ChannelLogicLevelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STU3055NL

N-ChannelEnhancementModeFieldEffectTransistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STUD3055L

SuperhighdensecelldesignforlowRDS(ON).

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

T3055EL

MEDIUMPOWERLOGICLEVELTMOSFET1.5AMP60VOLTS

MediumPowerFieldEffectTransistor N–ChannelEnhancementMode SiliconGateTMOSE–FET™ SOT–223forSurfaceMount ThisadvancedE–FETisaTMOSpowerMOSFETdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisdeviceisalsodesignedwithalowthresholdvoltagesoi

MotorolaMotorola, Inc

摩托罗拉加尔文制造公司

TIP3055

SiliconNPNPowerTransistor

DESCRIPTION •ExcellentSafeOperatingArea •DCCurrentGain-:hFE=20-70@IC=4A •Collector-EmitterSaturationVoltage-:VCE(sat)=1.1V(Max)@IC=4A •ComplementtoTypeTIP2955 APPLICATIONS •Designedforgeneral-purposeswitchingandamplifierapplications.

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

TIP3055

ComplementarySiliconHighPowerTtransistors

PNPTIP2955 NPNTIP3055 DESCRIPTION TheTIP3055isasiliconEpitaxial-BasePlanarNPNtransistormountendinTO-247plasticpackage.Itisintentedforpowerswitchingcircuits,seriesandshuntregulators,outputstagesandhi-fiamplifiers. ThecomplementaryPNPtypeistheTIP295

TGS

Tiger Electronic Co.,Ltd

详细参数

  • 型号:

    RFD3055SM_Q

  • 功能描述:

    MOSFET Power MOSFET N-Ch 6V/12a/.15 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
24+
5000
公司存货
询价
飞利浦
24+
TO-252
4897
绝对原装!现货热卖!
询价
INTERSIL
2016+
TO252
6528
只做进口原装现货!假一赔十!
询价
FSC
2020+
TO-252
6258
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价
HARRIS
23+
TO263-3
5000
原装正品,假一罚十
询价
HARRIS
23+
TO263
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
询价
TI
23+
TO-263
12000
全新原装假一赔十
询价
HARRIS
24+
SOT-252
25000
一级专营品牌全新原装热卖
询价
FSC
24+
TO-252
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
INTERSIL
23+
TO-252
30000
代理全新原装现货,价格优势
询价
更多RFD3055SM_Q供应商 更新时间2025-5-18 10:20:00