S uper high dense cell design for low R DS (ON).

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SAMHOP

三合微科

S uper high dense cell design for low R DS (ON).

Samhop

三合微科

MEDIUM POWER LOGIC LEVEL TMOS FET 1.5 AMP 60 VOLTS

Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FET™ SOT–223 for Surface Mount This advanced E–FET is a TMOS power MOSFET designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so i

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MOTOROLA

摩托罗拉

NPN SILICON POWER TRANSISTOR

● Designed for Complementary Use with the TIP2955 Series ● 90 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available Collector-base voltage (IE = 0) VCBO 100 V Collector-emitter voltage (IB = 0) (see Note 1) VCER 70 V Emitter-base voltage VEB

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POINN

POWER TRANSISTORS COMPLEMENTARY SILICON

15 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60 VOLTS, 90 WATTS • DC Current Gain − hFE = 20-70 @ IC= 4.0 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC= 4.0 Adc • Excellent Safe Operating Area • These are Pb−Free Devices*

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ONSEMI

安森美半导体