Super high dense cell design for low RDS(ON).

文件：151.68 Kbytes 页数：9 Pages

Samhop

三合微科

Super high dense cell design for low RDS(ON).

Samhop

三合微科

Fast Switching

文件：49.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 150V, 30A, RDS(ON) = 70mΩ @VGS = 10V. RDS(ON) = 80mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package.

文件：420.91 Kbytes 页数：4 Pages

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：647.12 Kbytes 页数：4 Pages

CET-MOS

华瑞