首页 >RF1S>规格书列表

型号下载 订购功能描述制造商 上传企业LOGO

RF1S9630SM

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -6.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:349.95 Kbytes 页数:2 Pages

ISC

无锡固电

RF1S9630SM

6.5A, 200V, 0.800 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件:63.9 Kbytes 页数:7 Pages

INTERSIL

RF1S9640SM

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件:63.94 Kbytes 页数:7 Pages

INTERSIL

RF1S9640SM

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -11A@ TC=25℃ ·Drain Source Voltage -VDSS= -200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.5Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件:349.33 Kbytes 页数:2 Pages

ISC

无锡固电

RF1SLASHRL1

TRADITIONAL PROTECTION FOR CIRCUITS WITH LESS THAN 10,000A

FEATURES/BENEFITS : • Knurled bushings for ease of disassembly • Rugged construction for maximum service life • Precision die-cut renewal links renew quickly and give repeatable performance

文件:106.87 Kbytes 页数:2 Pages

MERSEN

美尔森

RF1S0CA

RC Series carbon composition

文件:288.94 Kbytes 页数:4 Pages

OHMITE

RF1S0CA

Twelve wattage ratings

文件:331.13 Kbytes 页数:4 Pages

OHMITE

RF1S25N06SM

N-Channel 60 V (D-S) MOSFET

文件:1.29338 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

RF1S30N06LESM

N-Channel 60 V (D-S) MOSFET

文件:1.29281 Mbytes 页数:9 Pages

VBSEMI

微碧半导体

RF1S40N10LESM

40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs

文件:413.06 Kbytes 页数:8 Pages

INTERSIL

详细参数

  • 型号:

    RF1S

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

供应商型号品牌批号封装库存备注价格
KA/INTRISII
22+
TO-
6000
十年配单,只做原装
询价
KA/INTRISII
25+
TO-
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
24+
N/A
3510
询价
HAR
23+
RF1S45N06LES
13528
振宏微原装正品,假一罚百
询价
EMP
23+
SOT-23-5
69820
终端可以免费供样,支持BOM配单!
询价
-
23+
NA
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
HARRIS
06+
TO-263
300
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
SOT-263
7498
一级代理 原装正品假一罚十价格优势长期供货
询价
INTERSIL
23+
SOT263
8000
只做原装现货
询价
H
23+24
SOT263
17280
专业经营各种场效应管、三极管、IGBT、可控硅、稳压IC
询价
更多RF1S供应商 更新时间2026-3-13 14:02:00