60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

文件：104.11 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -60A@ TC=25℃ ·Drain Source Voltage -VDSS= -30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 27mΩ(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：285.38 Kbytes 页数：2 Pages

ISC

无锡固电

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

ONSEMI

安森美半导体

60A, 30V, Avalanche Rated, P-Channel Enhancement-Mode Power MOSFETs

Features • 60A, 30V • rDS(ON) = 0.027Ω • Temperature Compensating PSPICE® Model • Peak Current vs Pulse Width Curve • UIS Rating Curve • 175oC Operating Temperature • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

文件：104.11 Kbytes 页数：6 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

These P-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

文件：88.95 Kbytes 页数：7 Pages

Intersil

P-Channel 30-V (D-S) MOSFET

文件：967.13 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

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