P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

文件：424.12 Kbytes 页数：7 Pages

HARRIS

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -19A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：288.64 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

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瑞萨

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as

文件：59.77 Kbytes 页数：7 Pages

INTERSIL

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= -19A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.53 Kbytes 页数：2 Pages

ISC

无锡固电

P-CHANNEL POWER MOSFETS

Description The IRF9540, IRF9541, IRF9542, IRF9543, RF1S9540, and RF1S9540SM are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect tran

文件：424.12 Kbytes 页数：7 Pages

HARRIS

19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs

Renesas

瑞萨