SI2301

Plastic-EncapsulateMosfets

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2301

HighdensecelldesignforextremelylowRDS(ON)

Plastic-EncapsulateMosfets FEATURES •HighdensecelldesignforextremelylowRDS(ON) •Ruggedandreliable •CaseMaterial:MoldedPlastic.

SI2301

P-CHANNELMOSFETinaSOT-23PlasticPackage

Descriptions P-CHANNELMOSFETinaSOT-23PlasticPackage. Features TrenchFETPowerMOSFET100RgTested. Applications Primarilythedisplayscreendriveapplications.

SI2301

P-ChannelEnhancementModeMOSFET

Feature ●-20V/-3A,RDS(ON)=120mΩ(MAX)@VGS=-4.5V. RDS(ON)=150mΩ(MAX)@VGS=-2.5V. ●SuperHighdensecelldesignforextremelylowRDS(ON) ●ReliableandRugged ●SOT-23forSurfaceMountPackage Applications ●PowerManagement PortableEquipmentandBattery

SI2301A

P-ChannelEnhancementModeFieldEffectTransistor

SI2301A

P-Channel20-V(D-S)MOSFET

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

SI2301A

P-Channel20-V(D-S)MOSFET

FEATURE TrenchFETPowerMOSFET APPLICATION LoadSwitchforPortableDevices DC/DCConverter

SI2301ADS

P-Channel2.5-V(G-S)MOSFET

P-Channel2.5-V(G-S)MOSFET

Si2301ADS

Triple-SupplyPowerManagementICforPoweringFPGAsandDSPs

SI2301ADS

P-ChannelEnhancement-ModeMOSFETs

Application @Batteryprotection @Loadswitch @Powermanagement