首页 >RC2301(A1SHB)>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
CMOSDualOperationalAmplifier | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
HIGHISOLATIONBUFFERAMPLIFIER ProductDescription TheRF2301isahighreverseisolationbufferamplifier.Thedeviceismanufacturedonalow-costGalliumArsenideMESFETprocess,andhasbeendesignedforuseasageneralpurposebufferinhigh-endcommunicationsystemsoperatingatfrequenciesfromlessthan300MHztohigh | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
HIGHISOLATIONBUFFERAMPLIFIER ProductDescription TheRF2301isahighreverseisolationbufferamplifier.Thedeviceismanufacturedonalow-costGalliumArsenideMESFETprocess,andhasbeendesignedforuseasageneralpurposebufferinhigh-endcommunicationsystemsoperatingatfrequenciesfromlessthan300MHztohigh | RFMDRF Micro Devices 威讯联合威讯联合半导体(德州)有限公司 | RFMD | ||
P-ChannelEnhancementModePowerMOSFET | RECTRON Rectron Semiconductor | RECTRON | ||
P-ChannelEnhancementModeMosfet Features TrenchFETPowerMOSFET LoadSwitchforPortableDevices. DC/DCConverter. | RECTRON Rectron Semiconductor | RECTRON | ||
P-ChannelEnhancementModePowerMOSFET GeneralFeatures VDS=-20V,ID=-2.6A RDS(ON) | RECTRON Rectron Semiconductor | RECTRON | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1301~1306 | TOSHIBAToshiba Semiconductor 东芝株式会社东芝 | TOSHIBA | ||
P-Channel20-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Definition •TrenchFET®PowerMOSFET •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •LoadSwitch •PASwitch •DC/DCConverters | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
20VP-ChannelEnhancementModeMOSFET | SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司 | SIRECT | ||
20VP-ChannelEnhancementModeMOSFET | SIRECTSirectifier Global Corp. 矽莱克半导体深圳市矽莱克半导体有限公司 | SIRECT |
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