丝印：R7；Package：SOT416；N-channel TrenchMOS ultra low level FET

1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in ultra small Surface-Mounted Device (SMD) plastic package using TrenchMOS technology. 1.2 Features and benefits  Low threshold voltage  Surface mounted package  Low on-state resistance  Footprint 63 small

文件：482.99 Kbytes 页数：14 Pages

NEXPERIA

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丝印：R7；Package：DFN1006BD-2；Zener voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：296.87 Kbytes 页数：13 Pages

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丝印：R7；Package：SOD123F；1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER

Features - Glass Passivated Die Construction - Fast Recovery Time For High Efficiency - Small Form Factor, Low Profile - Ideally Suited for Automated Assembly - Lead-Free Finish; RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - For automotive applications

文件：726.62 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：R7；Package：SOD123F；1.0A SURFACE MOUNT FAST RECOVERY RECTIFIER

Features - Glass Passivated Die Construction - Fast Recovery Time for High Efficiency - Small Form Factor, Low Profile - Ideally Suited for Automated Assembly - Lead-Free Finish; RoHS Compliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) - The RS1MSWFMQ is suitable fo

文件：756.7 Kbytes 页数：5 Pages

DIODES

美台半导体

丝印：R7；Package：X2SON；TLV774 300mA, Small-Size, High-PSRR, Low-Dropout Regulator With Enable

1 Features • High PSRR: 60dB (1kHz), 45dB (1MHz) • VIN range: 1.4V to 5.5V • Fixed output voltage range: 0.6V to 3.3V • Output voltage accuracy: 2% • Low dropout voltage: – 310mV max at 300mA (1.2VOUT) over temperature • Foldback current limit • Active output pulldown resistor • Pack

文件：1.53083 Mbytes 页数：26 Pages

TI

德州仪器

丝印：r7；Package：XSON6；Low-power dual buffer with open-drain output

文件：830.35 Kbytes 页数：17 Pages

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丝印：r7；Package：XSON6；Low-power dual buffer with open-drain output

文件：830.35 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：r7；Package：XSON6；Low-power dual buffer with open-drain output

文件：830.35 Kbytes 页数：17 Pages

NEXPERIA

安世

丝印：r7；Package：X2SON6；Low-power dual buffer with open-drain output

文件：830.35 Kbytes 页数：17 Pages

NEXPERIA

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丝印：R7；Package：SOT-23-6L；P-Channel Enhancement Mode Field Effect Transistor

文件：386.1 Kbytes 页数：4 Pages

FS