丝印：R7；Package：SOT-23-6L；P-Channel Enhancement Mode Field Effect Transistor

文件：386.1 Kbytes 页数：4 Pages

FS

MOS FET:Low Voltage

First Silicon

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The G3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. Features * Lower Gate Charge * Small Package Outline * RoHS Compliant

文件：303.6 Kbytes 页数：4 Pages

GTM

勤益投资控股

P - C H A N N E L E N H A N C E M E N T M O D E P O W E R M O S F E T

文件：321.15 Kbytes 页数：4 Pages

ETL

亚历电子

P-Channel Enhancement Mode Power MOSFET

文件：533.34 Kbytes 页数：7 Pages

HMSEMI

华之美半导体