HM3407A

Marking：HM3407A；Package：SOT-23-3L；P-Channel Enhancement Mode Power MOSFET

IIRFB3407Z

N-ChannelMOSFETTransistor

IRFB3407Z

N-ChannelMOSFETTransistor

IRFB3407ZPBF

HardSwitchedandHighFrequencyCircuits

IRFB3407ZPBF

BatteryManagement

JMTL3407A

K3407

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(PIE-MOSV)

SwitchingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=0.48Ω(typ.) •Highforwardtransferadmittance:|Yfs|=7.5S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=450V) •Enhancement-mode:Vth=2.4~3.4V(VDS=10V,ID=1mA)

KO3407

P-ChannelEnhancementModeFieldEffectTransistor

Features ●VDS(V)=-30V ●ID=-4.1A ●RDS(ON)52m(VGS=-10V) ●RDS(ON)87m(VGS=-4.5V)

LM3407

LM3407350mA,ConstantCurrentOutputFloatingBuckSwitchingConverter

LM3407

350mA,ConstantCurrentOutputFloatingBuckSwitchingConverterforHighPowerLEDs