丝印：R6020JNJ；Package：LPTS；Nch 600V 20A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

文件：2.49157 Mbytes 页数：15 Pages

ROHM

罗姆

丝印：R6020JNJ；Package：LPTS；Nch 600V 20A Power MOSFET

Features 1) Fast reverse recovery time (trr) 2) Low on-resistance 3) Fast switching speed 4) Drive circuits can be simple 5) Pb-free plating ; RoHS compliant Application Switching applications

文件：2.49157 Mbytes 页数：15 Pages

ROHM

罗姆

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.24Ω(Max)@VGS= 15V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：349.68 Kbytes 页数：2 Pages

ISC

无锡固电