丝印：R6504E；Package：TO-252；Nch 650V 4A Power MOSFET

文件：2.23874 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：R6504E；Package：TO-252；Nch 650V 4A Power MOSFET

文件：2.23874 Mbytes 页数：14 Pages

ROHM

罗姆

丝印：D2PAK；Package：TO-263；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

文件：299.23 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 4A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.1Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：299.07 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 4.0A@ TC=25℃ Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 1.05Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variatio

文件：295.89 Kbytes 页数：2 Pages

ISC

无锡固电