丝印：R2p；Package：SOT-23；NPN 6 GHz wideband transistor

DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT93. FEATURES • High power gain • Low noise figure • Very low intermodulation distortion. APPLICATIONS • RF wideband amplifiers and oscillators.

文件：117.7 Kbytes 页数：12 Pages

PHI

飞利浦

丝印：R2p；Package：SOT-23；NPN Silicon RF Transistor

NPN Silicon RF Transistor* • For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA • Pb-free (RoHS compliant) package1) • Qualified according AEC Q101 * Short term description

文件：80.54 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：R2p；Package：SOT-23；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 页数：130 Pages

恩XP

丝印：R2p；Package：SOT-23；NPN Silicon RF Transistor

文件：142.49 Kbytes 页数：7 Pages

Infineon

英飞凌

丝印：R2p；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：614.9 Kbytes 页数：6 Pages

Infineon

英飞凌

丝印：LH；Package：SOT-89；Nch 60V 2A Middle Power MOSFET

Features 1) Low on-resistance 2) Low voltage drive(2.5V drive) 3) AEC-Q101 Qualified Application Switching

文件：2.74942 Mbytes 页数：14 Pages

ROHM

罗姆

2 Post Standard Equipment Rack

文件：434.46 Kbytes 页数：2 Pages

PANDUIT

2 Post Standard Equipment Rack

文件：434.46 Kbytes 页数：2 Pages

PANDUIT

2 Post Standard Equipment Rack

文件：435.24 Kbytes 页数：2 Pages

PANDUIT

2 Post Standard Equipment Rack

文件：434.46 Kbytes 页数：2 Pages

PANDUIT