BAT46W-G

Marking：LH；Small Signal Schottky Diode

FEATURES •Forgeneralpurposeapplications •Thisdiodefeaturesverylowturn-onvoltage andfastswitching •ThisdeviceisprotectedbyaPNjunctionguard ringagainstexcessivevoltage,suchas electrostaticdischarges •AEC-Q101qualifiedavailable (partnumberonrequest) •Base

BF569

Marking：LH；Package：SOT-23；Silicon PNP Planar RF Transistor

Applications ForselfoscillatingRFmixerstages. Features Highgain Lownoise

EMIF06-USD14F3

Marking：LH；Package：FlipChip；6-line low capacitance IPAD for micro-SD card with EMI filtering and ESD protection

Description TheEMIF06-USD14F3isa6-lineEMIfilter dedicatedtoSD,mini-SDandmicro-SDcard applications. ThisfilterincludesESDprotectioncircuitry,which preventsdamagetotheprotecteddevicewhen insertingthecard.Pull-upresistorsarenot integratedinsidethechip,henceth

P6SMB15

Marking：LH；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

P6SMBJ14

Marking：LH；Package：SMB；600W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

GlassPassivatedDieConstruction 600WPeakPulsePowerDissipation 5.0V–440VStandoffVoltage Uni-andBi-DirectionalVersionsAvailable ExcellentClampingVoltage TypicalResponseTime

P6SMBJ15

Marking：LH；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ●GlassPassivatedDieConstruction ●Uni-andBi-DirectionalVersionsAvailable ●ExcellentClampingCapability ●FastResponseTime ●PlasticMaterial:ULFlammabilityClassificationRating94V-0

PMEG150G20ELR

Marking：LH；Package：CFP3；150 V, 2 A Silicon Germanium (SiGe) rectifier

Features •LowforwardvoltageandlowQrr •Extremelylowleakagecurrent •Thermalstabilityupto175°Cjunctiontemperature •Fastandsmoothswitching •Lowparasiticcapacitance •AEC-Q101qualified Benefits •Excellentefficiency •Extraordinarysafeoperatingarea •Minimalim

PMEG150G20ELR-Q

Marking：LH；Package：CFP3；150 V, 2 A Silicon Germanium (SiGe) rectifier

1.Generaldescription SiliconGermanium(SiGe)rectifierencapsulatedinaCFP3(SOD123W)smallandflatlead Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits FeaturesBenefits •LowforwardvoltageandlowQrr •Extremelylowleakagecurrent •Thermalstabilityupto

R2P020N06HZG

Marking：LH；Package：SOT-89；Nch 60V 2A Middle Power MOSFET

Features 1)Lowon-resistance 2)Lowvoltagedrive(2.5Vdrive) 3)AEC-Q101Qualified Application Switching

SMBJ13

Marking：LH；Package：DO-214AA；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features GlassPassivatedDieConstruction Uni-andBi-DirectionalVersionsAvailable ExcellentClampingCapability FastResponseTime PlasticMaterial:ULFlammability ClassificationRating94V-0