74438440200030

Marking：R30；WE-MXGI SMT Power Inductor

GeneralInformation: AmbientTemperature(referring toIRP)-40°Cupto+85°C OperatingTemperature-40°Cupto+125°C StorageConditions(inoriginal packaging)

FJV3110RMTF

Marking：R30；Package：SOT-23；NPN Epitaxial Silicon Transistor

ISL9R3060G2-F085

Marking：R3060G2；Package：TO-247；STEALTH Rectifier 30 A, 600 V

Description TheISL9R3060G2−F085isSTEALTHdiodeoptimizedforlow lossperformanceinhighfrequencyhardswitchedapplications.The STEALTHfamilyexhibitslowreverserecoverycurrent(IRRM)and exceptionallysoftrecoveryundertypicaloperatingconditions. Thisdeviceisintendedforus

R3000

Marking：R3000HVGT；High Voltage Silicon Rectifier Diode

R3000

Marking：R3000HVGT；High Voltage Silicon Rectifier Diode

REF3012

Marking：R30A；Package：SOT-23；50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

REF3012

Marking：R30A；Package：SOT-23；CMOS Voltage Reference

REF3020

Marking：R30B；Package：SOT-23；50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

REF3025

Marking：R30C；Package：SOT-23；50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE

REF3030

Marking：R30F；Package：SOT-23；50ppm/C Max, 50UA in SOT23-3 CMOS VOLTAGE REFERENCE