丝印：R30；WE-MXGI SMT Power Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：727.62 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SC70(DCK)；REF33xx 3.9-μA, SC70-3, SOT-23-3, and UQFN-8, 30-ppm/°C Drift Voltage Reference

1 Features 1• Microsize Packages: SC70-3, SOT-23-3, UQFN-8 • Low Supply Current: 3.9 μA (typ) • Extremely Low Dropout Voltage: 110 mV (typ) • High Output Current: ±5 mA • Low Temperature Drift: 30 ppm/°C (max) • High Initial Accuracy: ±0.15% (max) • 0.1-Hz to 10-Hz Noise: 35 μVPP (REF33

文件：1.27003 Mbytes 页数：39 Pages

TI

德州仪器

丝印：R30；Package：SOT-23；NPN Epitaxial Silicon Transistor

文件：237.5 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：R3060G2；Package：TO-247；STEALTH Rectifier 30 A, 600 V

Description The ISL9R3060G2−F085 is STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for us

文件：383.14 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：R30A；Package：SOT-23(DBZ)；REF30E and REF30, Low Current Voltage Reference in SOT-23-3

1 Features • Small industry standard footprint: SOT23-3 • High accuracy – REF30E: ±0.1% – REF30: ±0.2% • Excellent temperature drift performance: – REF30E: 20ppm/°C – REF30: 75ppm/°C • REF30E is drop-in replacement of REF30 • Low IQ (typical) – REF30E: 25μA – REF30: 42μA • High

文件：1.43051 Mbytes 页数：32 Pages

TI

德州仪器